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Samsung annouces 32GB NAND flash device
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Written by Danrok   
Monday, 11 September 2006 13:52

Press release, September 11; Carrie Yu, DigiTimes.com [Monday 11 September 2006].

Samsung Electronics today announced it has developed what it claims is the industry's first 40nm memory device. The new 32Gbit NAND flash device is the first memory to incorporate a charge trap flash (CTF) architecture, a new approach to further increase manufacturing efficiency while greatly improving performance, according to Samsung.

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