Infineon Technologies AG announced Monday that they had achieved a breakthrough in transistor manufacturing technology.  Dubbed "multi-gate field-effect transistor" (MUG-FET) and known elsewhere as Fin-FET (because of its unique fin-shaped gate structure), the devices enabled Infineon to manufacture a 3,000 circuit device utilizing 65nm manufacturing processes which demonstrated a 10-fold improvement in energy efficiency over devices being manufactured today, and the scientists at Infineon believe that the efficiency will improve even more as the geometry sizes move to 32nm and 22nm processes.  This will enable systems such as cell phones to achieve a two-fold or better improvement in energy efficiency, it is predicted.  There is a good writeup about this over at EDN, and you can read Infineon's press release here.

(Image Courtesy Infineon)

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