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MIT demonstrates InGaAs transistors that could succeed silicon
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Written by Gizmo   
Thursday, 14 December 2006 13:39

Read the full story at Semiconductor Today:

"At this week’s IEEE International Electron Devices Meeting (IEDM) in San Francisco, CA, USA, the Massachusetts Institute of Technology (MIT) presented results on InGaAs-based high-electron mobility transistors (HEMTs) with thin InAlAs barrier layers that could succeed silicon in logic chips.

The increase in performance of CMOS-based ICs with shrinking of the constituent MOSFET transistors is expected to reach a limit for silicon within the next 10-15 years. “Unless we do something very radical pretty soon, the microelectronics revolution that has enriched our lives in so many different ways might come to a screeching halt,” says professor Jesus del Alamo, a member of MIT's Microsystems Technology Laboratories."

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