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The CMOS holy grail
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Written by Gizmo   
Thursday, 28 December 2006 09:00

Read the full story at Chipworks:

"The issue of gate leakage has haunted CMOS development since the 90nm generation.  Once a perfect dielectric, the gate dielectric has now become significantly leaky, so much so, that on the evidence we have seen, from 90-nm to 65-nm the gate dielectric thickness has not scaled (making this node the only generation where the gate dielectric did not become thinner.) This makes development of sub 65-nm technologies very problematic.  The industry-identified ‘planned saviour’ -  ie. the use of high-k dielectrics - would appear to be running into complex integration issues, and it is not clear if they will be introduced at the 45-nm node."

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