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Fujitsu develops improved ReRAM Tech
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Written by Danrok   
Friday, 14 December 2007 10:28

From DailyTech:

More power-efficient ReRAM detailed by Fujitsu

M (Resistive RAM) that combines low power consumption with limited fluctuation of resistance value.

By adding titanium to the nickel oxide structure of ReRAM, Fujitsu was able to reduce the current needed to erase memory to 100 micro-amperes or less. The researchers were also able to decrease the fluctuation of resistance value by 90 percent when compared to conventional ReRAM.

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