Tech Business
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Written by Gizmo
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Wednesday, 12 August 2009 11:08 |
Brooke Crothers - CNET
On Tuesday, Intel and Micron Technology announced the development of
high-data-capacity flash memory technology for flash cards and USB
drives.
And in a related announcement, Intel said Monday that it has
validated a fix for its new 34-nanometer X25-M solid-state drive, which
is based on similar flash memory technology. The bug affects users who
set a BIOS drive password. That update is available here.
The two chipmakers, which partner in the manufacture of flash memory
chips, said Tuesday that they have developed NAND flash memory capable
of 3 bits per cell based on 34-nanometer technology. This allows
greater data density than the standard 2-bits-per-cell technology and
will result in high-capacity USB flash drives, according to Micron.
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