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16 Gb Flash at 56 nm from Toshiba
Written by Gizmo   
Thursday, 25 January 2007 12:20
(Image courtesy of Toshiba)
Toshiba announced yesterday the introduction of an 8 Gb and 16 Gb flash memory using 56 nm manufacturing technology co-developed with Sandisk.

We previously reported on Samsung's sampling of a 16 Gb device on a 50 nm process.  Apparently, Toshiba felt the urge to compete.  Although Toshiba's process isn't quite as cutting edge as Samsung's, Toshiba seems to feel that the technology will give them an edge on costs.

The devices are based on Multilevel chip technology, as with Samsung, offering a write performance of 10 megabytes per second, which is twice the speed of Toshiba's previous product generation.  The 8 GB parts are available now, and the 16 GB parts will be available early in Q2 (figure late April or so).

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